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dc.rights.licenseAll rights reserveden_US
dc.contributor.authorMuñoz, William
dc.date.accessioned2022-04-29T16:50:42Z
dc.date.available2022-04-29T16:50:42Z
dc.date.issued1996-12
dc.identifier.citationMuñoz, W. (1996). Study of the density of states in amorphous Silicon-Hydrogen using the semiconductor/electrolyte system, Revista de la Universidad Politécnica de Puerto Rico, 6(2), 273-291.en_US
dc.identifier.urihttp://hdl.handle.net/20.500.12475/1503
dc.descriptionVolumen 6, Número 2, Diciembre 1996en_US
dc.description.abstractLocalized states in amorphous Silicon-Hydrogen are studied by pulsed measurements on the a-Si:H/electrolyte (S/E) system. The S/E interface is essentially blocking to current flow. As a result, surface space-charge layers, ranging from large depletion to very strong accumulation conditions, can be induced and studied. Measurements in the depletion range under illumination yield directly the total density of occupied states in the entire energy gap. This is useful in obtaining a quick and reliable assessment of the quality of the amorphous films. In high grade films we find that the total density of occupied states is around 1018 cm"3. The data in the accumulation range, on the other hand, provide useful information on unoccupied states near the conduction band edge.en_US
dc.language.isoenen_US
dc.publisherPolytechnic University of Puerto Ricoen_US
dc.relation.ispartofRevista de la Universidad Politécnica de Puerto Rico;
dc.relation.haspartSan Juanen_US
dc.subject.lcshPolytechnic University of Puerto Rico--Subject headings--Unassigneden_US
dc.subject.lcshPolytechnic University of Puerto Rico--Faculty--Researchen_US
dc.titleStudy of the density of states in amorphous Silicon-Hydrogen using the semiconductor/electrolyte systemen_US
dc.typeArticleen_US
dc.rights.holderEsta Junta Editorial y la Universidad Politécnica de Puerto Rico hacen constar y reconoce que los autores de los artículos, obras literarias y artísticas publicadas en esta Revista Politechnê, se reservan enteramente los derechos de autor y de publicación de los mismos para los efectos de cualquier ventualidad literaria, publicitaria o de cualquier índole.en_US


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