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dc.rights.licenseAll rights reserveden_US
dc.contributor.authorPantojas, Víctor M.
dc.date.accessioned2022-04-26T18:46:27Z
dc.date.available2022-04-26T18:46:27Z
dc.date.issued1996-06
dc.identifier.citationPantojas, V. M. (1996). Determination of interface roughness and its correlation in amorphous-silicon/ amorphous-germanium multilayers, Revista de la Universidad Politécnica de Puerto Rico, 6(1), 113-134.en_US
dc.identifier.urihttp://hdl.handle.net/20.500.12475/1495
dc.descriptionVolumen 6, Número 1, Junio 1996en_US
dc.description.abstractThe importance of surfaces and interfaces of materials is increasing in many technological areas. In the microelectronic industry, for example, the J current trend is toward even faster and smaller electronic devices. Devices such » as metal-oxide semiconductor field effect transistors (MOSFET) function by manipulating the density of electrons trapped in a potential well at the oxide-semiconductor interface. The insulator-semiconductor interface will play an increasingly important role in the performance of this and similar devices. A clear understanding of the role played by the interface and how the interface morphology may affect the device performance is necessary. The possibility of constructing multilayered structures, which increase the interface to volume ratio, has opened a number of possibilities in the study of interface morphology and its relation with growth. In this work I study surface and interface roughness in hydrogenated amorphous-silicon/ amorphous-germanium multilayers by means of x-ray scattering techniques. Specular and diffuse x-ray scattering measurements were performed in order to study how roughness propagates from interface to interface during growth, as well as to examine the lateral length scale of the roughness, which is related to the surface diffusion process. Interface roughness was found to increase sub-linearly with distance of the interface from the substrate. The root mean square roughness near the substrate was found to be about 0.3 nm whereas at the surface the best fit was found for 18 nm of rms roughness. It was found that interface roughness was highly correlated from layer to layer and a correlation length of 30 nm was obtained. The fact that roughness is correlated from interface to interface on a scale given by the correlation length suggests that lateral diffusion during growth was of order, of or below, 30 nm.en_US
dc.language.isoenen_US
dc.publisherPolytechnic University of Puerto Ricoen_US
dc.relation.ispartofRevista de la Universidad Politécnica de Puerto Rico;
dc.relation.haspartSan Juanen_US
dc.subject.lcshSurface roughness--Measurementen_US
dc.subject.lcshPolytechnic University of Puerto Rico--Faculty--Researchen_US
dc.subject.lcshAmorphous semiconductors
dc.titleDetermination of interface roughness and its correlation in amorphous-silicon/ amorphous-germanium multilayersen_US
dc.typeArticleen_US
dc.rights.holderEsta Junta Editorial y la Universidad Politécnica de Puerto Rico hacen constar y reconoce que los autores de los artículos, obras literarias y artísticas publicadas en esta Revista Politechnê, se reservan enteramente los derechos de autor y de publicación de los mismos para los efectos de cualquier ventualidad literaria, publicitaria o de cualquier índole.en_US


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